sot-89-3l 1. base 2. collector 3. emitter jiang su changjiang electronics technology co., ltd sot-89-3l plastic-encapsulate transistors 2SB1424 transistor (pnp) features ? excellent dc c u rrent g ain ? l ow c o llector-emitter saturation voltage ? c omplement the 2sd2150 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50a,i e =0 -20 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b = 0 -20 v emitter-base breakdown voltage v (br)ebo i e =-50a,i c =0 -6 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-2v, i c =-0.1a 120 390 collector-emitter saturation voltage v ce(sat) i c =-2a,i b =-0.1a -0.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 35 pf transition frequency f t v ce =-2v,i c =-0.5a, f=100mhz 240 mhz classification of h fe rank q r range 120 C 270 180 C 390 marking aeq aer symbol parameter value unit v cbo collector-base voltage -20 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -6 v i c collector current -3 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 www.cj-elec.com d,oct,2015
-0 -1 -2 -3 -4 -5 -6 -0 -100 -200 -300 -400 -500 0 25 50 75 100 125 150 0 100 200 300 400 500 600 -10 -100 10 100 -1 -10 -100 -1000 -100 -1000 -1 -10 -100 -1000 10 100 1000 -0.1 -1 -10 1 10 100 1000 -1 -10 -100 -1000 -10 -100 -1000 -0.0 -0.3 -0.6 -0.9 -1.2 -1 -10 -100 -1000 common emitter t a =25 -1.5ma -1.35ma -1.2ma -1.05ma -0.9ma -0.75ma -0.6ma -0.45ma -0.3ma i b =-0.15ma collector current i c (ma) collector-emitter voltage v ce (v) i c ?? ambient temperature t a ( ) collector power dissipation p c (mw) p c ?? t a common emitter v ce = -2v t a =25 collector current i c (ma) transition frequency f t (mhz) 200 -7 -3000 f t ?? =20 i c v besat ?? t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) -2000 common emitter v ce =-2v -3000 i c i c t a =100 t a =25 collector current i c (ma) dc current gain h fe f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? capacitance c t (pf) reverse voltage v (v) c ib c ob -20 -3000 h fe ?? =20 i c v cesat ?? t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (mv) v ce common emitter v ce =-2v collector current i c (ma) t a = 2 5 t a = 1 0 0 base-emmiter voltage v be (v) -3000 i c ?? v be typical characteristics www.cj-elec.com 2 www.cj-elec.com d,oct,2015
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 www.cj-elec.com d,oct,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 www.cj-elec.com d,oct,2015
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